- 您现在的位置：买卖IC网 > Sheet目录509 > SI4100DY-T1-E3 (Vishay Siliconix)MOSFET N-CH D-S 100V 8-SOIC
Si4100DY
Vishay Siliconix
SPECIFICATIONS T J = 25 °C, unless otherwise noted
Parameter
Symbol
Test Conditions
Min.
Typ.
Max.
Unit
Static
Drain-Source Breakdown Voltage
V DS Temperature Coefficient
V GS(th) Temperature Coefficient
V DS
Δ V DS /T J
Δ V GS(th) /T J
V GS = 0 V, I D = 250 μA
I D = 250 μA
100
120
-9
V
mV/°C
Gate-Source Threshold Voltage
V GS(th)
V DS = V GS , I D = 250 μA
2
4.5
V
Gate-Source Leakage
Zero Gate Voltage Drain Current
On-State Drain Current a
I GSS
I DSS
I D(on)
V DS = 0 V, V GS = ± 20 V
V DS = 100 V, V GS = 0 V
V DS = 100 V, V GS = 0 V, T J = 55 °C
V DS ≥ 5 V, V GS = 10 V
20
± 100
1
10
nA
μA
A
Drain-Source On-State Resistance a
Forward Transconductance a
R DS(on)
g fs
V GS = 10 V, I D = 4.4 A
V GS = 6 V, I D = 3.8 A
V DS = 15 V, I D = 4.4 A
0.051
0.069
10
0.063
0.084
Ω
S
Dynamic
b
Input Capacitance
C iss
600
Output Capacitance
Reverse Transfer Capacitance
C oss
C rss
V DS = 50 V, V GS = 0 V, f = 1 MHz
90
50
pF
Total Gate Charge
Gate-Source Charge
Q g
Q gs
V DS = 50 V, V GS = 10 V, I D = 4.4 A
V DS = 50 V, V GS = 6 V, I D = 4.4 A
13.5
9
3
20
13.5
nC
Gate-Drain Charge
Q gd
4.6
Gate Resistance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
R g
t d(on)
t r
t d(off)
f = 1 MHz
V DD = 50 V, R L = 14.3 Ω
I D ? 3.5 A, V GEN = 6 V, R g = 1 Ω
1
15
12
12
25
20
20
Ω
Fall Time
Turn-On Delay Time
t f
t d(on)
10
10
15
15
ns
Rise Time
Turn-Off Delay Time
Fall Time
t r
t d(off)
t f
V DD = 50 V, R L = 14.3 Ω
I D ? 3.5 A, V GEN = 10 V, R g = 1 Ω
12
15
10
20
25
15
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current
Pulse Diode Forward Current
I S
I SM
T C = 25 °C
5
20
A
Body Diode Voltage
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
Reverse Recovery Fall Time
Reverse Recovery Rise Time
V SD
t rr
Q rr
t a
t b
I S = 3.5 A, V GS = 0 V
I F = 3.5 A, dI/dt = 100 A/μs, T J = 25 °C
0.8
45
80
33
12
1.2
70
120
V
ns
nC
ns
Notes:
a. Pulse test; pulse width ≤ 300 μs, duty cycle ≤ 2 %
b. Guaranteed by design, not subject to production testing.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
www.vishay.com
2
Document Number: 69251
S09-0220-Rev. B, 09-Feb-09
发布紧急采购，3分钟左右您将得到回复。
相关PDF资料
SI4104DY-T1-E3
MOSFET N-CH D-S 100V 8-SOIC
SI4108DY-T1-GE3
MOSFET N-CH 75V 20.5A 8-SOIC
SI4122DY-T1-GE3
MOSFET N-CH 40V 27.2A 8-SOIC
SI4126DY-T1-GE3
MOSFET N-CH 30V 39A 8-SOIC
SI4134DY-T1-E3
MOSFET N-CH D-S 30V 8-SOIC
SI4158DY-T1-GE3
MOSFET N-CH D-S 20V 8-SOIC
SI4170DY-T1-GE3
MOSFET N-CH 30V 30A 8-SOIC
SI4174DY-T1-GE3
MOSFET N-CH D-S 30V 8-SOIC
相关代理商/技术参数
SI4100DY-T1-GE3
功能描述:MOSFET 100V 6.8A 6.0W 63mohm @ 10V RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
Si4101DY-T1-GE3
功能描述:MOSFET -30V .006Ohm@10V 25.7A P-Ch G-III
RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
SI4102DY
制造商:VISHAY 制造商全称:Vishay Siliconix 功能描述:N-Channel 100-V (D-S) MOSFET
SI4102DY-T1-E3
功能描述:MOSFET 100V 3.8A 4.8W RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
SI4102DY-T1-GE3
功能描述:MOSFET 100V 3.8A 4.8W 158mohm @ 10V RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
SI4104DY
制造商:VISHAY 制造商全称:Vishay Siliconix 功能描述:N-Channel 100-V (D-S) MOSFET
SI4104DY-T1-E3
功能描述:MOSFET 100V 4.6A 5.0W 105mohm @ 10V RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
SI4104DY-T1-GE3
功能描述:MOSFET 100V 4.6A 5.0W 105mohm @ 10V RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube